Korean Journal of Materials Research, Vol.10, No.11, 749-754, November, 2000
반도체 메모리 소자 응용을 위한 TaSiN 확산 방지층의 산화 저항성
Oxidation resistnace of TaSiN diffusion barrier layers for Semiconductor memory device application
초록
약 90 nm 두께의 비정질 TaSiN박막을 poly-Si and SiO 2 /Si 기판 위에 rf magnetron sputtering법으로 증착하였다. TaSiN박막은 산소부위기에서 열처리 시 900 ? C 까지 결정화되지 않는 비정질 상을 보였다. 산소의 확산 깊이는 산소분위기 열처리 온도가 증가함에 따라 증가하였으며 650 ? C , 30분 열처리시 Ta 23 Si 29 N 48 의 경우 약 20 nm의 깊이까지 확산되었다. Ta 23 Si 29 N 48 박막의 증착 후 비저항은 약 1,300μΩ?cm 의 값을 보였지만 산소분위기 열처리시 700 ? C 이상에서 급격히 증가하였다.
Amorphous TaSiN thin films of about 90 nm thick were deposited onto poly-Si and SiO 2 /Si substrates by rf magnetron sputtering method. TaSiN films exhibited amorphous phase with no crystllization up to 900 ? C in oxygen ambient. The penetration depth of oxygen diffusion increased with increasing annealing temperature in oxygen ambient and reached 20 nm deep in a Ta 23 Si 29 N 48 layer at 600 ? C for 30min. The resistivity of as-deposited Ta 23 Si 29 N 48 thin films was about 1,300μΩ?cm , however those of annealed films markedly increased above 700 ? C in oxygen ambient as the annealing temperature increased.
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