| 학회 | 한국재료학회 |
| 학술대회 | 2022년 봄 (05/18 ~ 05/20, 쏠비치 삼척) |
| 권호 | 28권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Area-Selective Atomic Layer Deposition Using Amino Group-Containing Inhibitors |
| 초록 | Area-selective atomic layer deposition (AS-ALD), surface-determined patterning of bottom-up approaches, is a key technical element compatible with the manufacture of 3D nanoelectronics. It is possible to solve the misalignment issues that occurs during the lithography step through accurate pattern placement onto desired area (referred to as the “growth area”). In this work, molecules containing an amino group were employed as a vapor-phase surface moderator to inhibit thin film growth during the subsequent ALD process. Various metal and dielectric substrates which can be either non-growth area and growth area were explored to confirm the chemical adsorption with the inhibitor. Ru ALD was carried out to check deposition inhibition for the inhibitor on various surfaces. It is found that deposition selectivity could depend on chemical reactivity and structure of the inhibitors with an amino group. Various surface characterizations were conducted to investigate the chemo-selectivity of inhibitor and deposition selectivity. It is worthy to note that this approach would be applicable to advance the bottom-up nanofabrication to metal-dielectric patterns for next-generation nanoelectronics. |
| 저자 | 오지은 , 이정민 , 김우희 |
| 소속 | 한양대 |
| 키워드 | Area-Selective Atomic Layer Deposition ; Aniline ; Hexylamine ; Ruthenium |
