| 학회 | 한국재료학회 |
| 학술대회 | 2022년 봄 (05/18 ~ 05/20, 쏠비치 삼척) |
| 권호 | 28권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Area-Selective Atomic Layer Deposition of Ru Thin Films using Self-Assembled Monolayers with Different alkyl chain lengths |
| 초록 | Area selective atomic layer deposition (AS-ALD) has attracted significant attention for versatile 3D nanofabrication to upcoming device architectures, by virtue of various advantages such as accurate pattern transfer, reduced process steps, and cost-effectiveness over a conventional top-down patterning process. This is mainly because the AS-ALD process can exploit a bottom-up additive fashion onto pre-defined areas which pertains to chemo-selective binding between substrate and molecules. In this study, phosphonic acid self-assembled monolayers (SAMs) with different alkyl chain lengths were comparatively investigated to inactivate non-growth area during the subsequent ALD. Herein, Ru ALD was employed as a model system to evaluate deposition selectivity for metal and dielectric substrates treated with various phosphonic acid SAMs. Various analytical methods were utilized to comparatively evaluate the deposition selectivity depending on the inhibition effects of different alkyl chain lengths. It is envisaged that the current study provides insights for achieving the deposition selectivity on metal versus dielectric surfaces and opens up the possibility for new applications in next generation electronic devices. |
| 저자 | 이서현 , 이정민 , 김우희 |
| 소속 | 한양대 |
| 키워드 | <P>Area-selective atomic layer deposition ; Ruthenium ; Alkyl chain length ; Phosphonic acid</P> |
