| 학회 | 한국재료학회 |
| 학술대회 | 2022년 봄 (05/18 ~ 05/20, 쏠비치 삼척) |
| 권호 | 28권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Synthesis the defect-controlled few-layer WSe 2 via pulsed laser deposition |
| 초록 | Defects affects significantly intrinsic properties of two dimensional (2D) materials compared to bulk counterparts because electrons in 2D materials are limited to their atomically thin layers. For example, defects of transition metal dichalcogenides (TMDs) can stabilize the metastable phases during synthesis and processing, modulate the charge carrier type, and induce structural transitions. Therefore, controlling various types of defects, such as chalcogen vacancy, dislocation, and grain boundary, is essential to achieve appropriate characteristics and functionality. Tungsten diselenides (WSe 2 ) has p-type or ambipolar properties unlike other common TMDs and selenium antisite defects on the W sites in WSe 2 result in spatially localized excitons for long-lifetime single-photon emitters. Therefore, tuning the defects in WSe2 through the selection of appropriate substrates and optimizing the growth conditions can be promising strategies for engineering the electronic and optical properties. Here, we successfully synthesized the WSe 2 thin films at low temperature via home-made pulsed laser deposition (PLD) system. We successfully controlled selenium vacancies in WSe 2 thin films by the flow rate of selenium gas. Further, we modulated the density of the grain boundary of WSe 2 films by suppressing the unnecessary nucleation via the NaCl buffer layer in short process time. By carrying out Raman spectral analysis and electrical measurements, we have confirmed our WSe 2 thin films show improved properties compared to those deposited in conventional PLD methods. We expect that our study will be the cornerstone for the development of efficient TMDs synthesis methods and pave the way towards the fabrication of next-generation electronic devices through follow-up studies. |
| 저자 | 오인혁 1 , 이정우 2 , 황준범 1 , 이상한 1 |
| 소속 | 1 광주과학기술원, 2 연세대 |
| 키워드 | <P>Transition metal dichalcogenides ; Tunsten diselenides ; Defects ; Pulsed laser depostion</P> |
