| 학회 | 한국고분자학회 |
| 학술대회 | 2022년 가을 (10/05 ~ 10/07, 대구컨벤션센터) |
| 권호 | 47권 2호 |
| 발표분야 | 대학원생 구두발표(발표15분) |
| 제목 | Organic Ternary Logic Circuits with Vertical Stack of Heterojunction Transistor (HTR) with Flash Memory Transistors |
| 초록 | Organic multi-valued logic (MVL) devices have gained huge attention because of the higher data processing capability for future wearable electronics. Organic ternary logic inverters (T-inverters) has been demonstrated based on the heterojunction transistors (H-TRs), however, their electrical characteristics can hardly be controlled once the device was fabricated. Here, organic non-volatile flash memory-integrated T-inverter was demonstrated to achieve tunable electrical characteristics of the T-inverter. The flash memory and H-TR were used as pull-down and pull-up transistors, respectively, and vertically stacked to further enhance integration density. The T-inverter exhibited the tunable electrical characteristics according to the threshold voltage (V T ) shift of the flash memory. With the optimum programming state, the inverter performance was enhanced with middle logic value close to V DD /2. Moreover, this performance was maintained up to 10 years based on the excellent retention characteristics of the flash memory. |
| 저자 | 이창현 1 , 최준환 1 , 이충열 1 , 박홍근 2 , 이승민 1 , 김창현 3 , 유호천 3 , 임성갑 1 |
| 소속 | 1 KAIST, 2 삼성전자, 3 가천대 |
| 키워드 | Multi-valued logic circuits ; heterojunction transistor ; organic thin-film transistor nonvolatile memory ; three-dimensional structure |
