| 학회 | 한국화학공학회 |
| 학술대회 | 2002년 가을 (10/24 ~ 10/26, 서울대학교) |
| 권호 | 8권 2호, p.5526 |
| 발표분야 | 재료 |
| 제목 | p-GaN층에 따른 InGaN/GaN 다중 양자우물 발광 다이오드의 전기.광학적 특성 |
| 초록 | The effect of p-GaN layer with Cp2Mg flow rate and growth temperature on electrical and optical properties of InGaN/GaN MQW LED structures were investigated. As the Cp2Mg flow rate increased at constant growth temperature, an operation voltage decreased from 5.18 to 4.34 V at 20 mA injection current. However, the output power characteristics measured as a function of injection current at room temperature showed the highest light output power at Cp2Mg flow rate of 1.06 mmol/min. Also, the current-voltage characteristics at room temperature as a function of the growth temperature of p-GaN layer, an operation voltage decreased with increasing growth temperature. The output power characteristics measured as a function of injection current at room temperature achieved the highest light output power value at growth temperature of 1050 ℃. When the output power-current-voltage characteristics consider with Cp2Mg flow rate and growth temperature of p-GaN layer, optimum condition showed that Cp2Mg flow rate is 2.13 mmol/min and growth temperature of 1050 ℃. Also, We believe that the light output power is more sensitive to growth temperature than Cp2Mg flow rates in a certain growth condition range of p-GaN:Mg layer. |
| 저자 | 최락준 , 한윤봉 |
| 소속 | 전북대 |
| 키워드 | InGaN/GaN QW LEDs ; p-GaN layer ; L-I-V Properties |
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| VOD | VOD 보기 |
| 원문파일 | 초록 보기 |
