| 학회 | 한국화학공학회 |
| 학술대회 | 2014년 봄 (04/23 ~ 04/25, 창원컨벤션센터) |
| 권호 | 20권 1호, p.687 |
| 발표분야 | 재료 |
| 제목 | Ink-Pen Written FETs on Flexible Substrate using CuO QDs and Silver Nano-Inks |
| 초록 | To fabricate optoelectronic or FET devices, generally required complex steps are lithography, thermal evaporation for source/drain electrode deposition, dielectric layer deposition, etc. The ink-filled pen can offer a unique approach to fabricate flexible paper based devices by using handmade patterning techniques. Herein, we report all-layers ink-pen written CuO based field effect transistor (FETs), where ink-pen drawn silver electrodes, PVP and CuO were used as gate/source/drain electrodes, a gate dielectric layer and an active semiconductor layer, respectively. Ink-filled pen approach offer great potential for recognizing suitable materials for large-area and low-cost electronic applications. Ink-pen written devices with I D –V D curve at V G = 0 shows a clear rectifying behavior with the conductance of CuO decreases monotonically as the gate potential increases, confirming that the as-written CuO FET is a p-type at room-temperature. This flexible paper based CuO-FET shows µ FE of ~0.84 cm2/V.s. However, inkpen-written assisted with inkjet-printing FET shows mobility (µ FE ) of ~11.21 cm2/V.s at room temperature with on/off ratio ~104, and hole concentration of ~1012 cm-3. |
| 저자 | Mohammad Vaseem , 박용규 , 노원엽 , 한윤봉 |
| 소속 | 전북대 |
| 키워드 | CuO QDs ; Ink formulation ; Ink-pen ; Paper electronics ; Field effect transistor (FET) |
| VOD | VOD 보기 |
| 원문파일 | 초록 보기 |
